Download Broadband RF and Microwave Amplifiers by Andrei Grebennikov, Narendra Kumar, Binboga S. Yarman PDF

By Andrei Grebennikov, Narendra Kumar, Binboga S. Yarman

Broadband RF and Microwave Amplifiers presents huge assurance of broadband radio frequency (RF) and microwave strength amplifier layout, together with recognized ancient and up to date novel schematic configurations, theoretical methods, circuit simulation effects, and useful implementation techniques. The textual content starts by way of introducing two-port networks to demonstrate the habit of linear and nonlinear circuits, explaining the elemental ideas of strength amplifier layout, and discussing impedance matching and broadband strength amplifier layout utilizing lumped and disbursed parameters. The publication then:

  • Shows how dissipative or lossy gain-compensation-matching circuits can supply an immense trade-off among strength achieve, mirrored image coefficient, and working frequency bandwidth
  • Describes the layout of broadband RF and microwave amplifiers utilizing actual frequency thoughts (RFTs), providing a number of examples in keeping with the MATLAB® programming process
  • Examines Class-E energy amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications

Broadband RF and Microwave Amplifiers combines theoretical research with sensible layout to create a fantastic beginning for cutting edge rules and circuit layout techniques.

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14b, where the capacitance occurs across a narrow gap between thin-film transmission-line conductors [15]. These gaps are essentially very long and folded to use a small amount of area. In this case, it is important to keep the size of the capacitor very small relative to the wavelength, so that it can be treated as a lumped element. A larger total width-to-length ratio results in the desired higher shunt capacitance and lower series inductance. 14 Different series capacitor topologies. © 2016 by Taylor & Francis Group, LLC W 27 Two-Port Network Parameters where h is the spacing from the ground plane.

9 Noise Figure There are several primary noise sources in the electrical circuit. Thermal or white noise is created by the random motion of charge carriers due to thermal excitation, being always found in any conducting medium whose temperature is above absolute zero whatever the nature of the conduction process or the nature of the mobile charge carriers [26]. This random motion of carriers creates a fluctuating voltage on the terminals of each resistive element which increases with temperature.

Therefore, it is necessary to use special techniques to improve the inductor electrical performance. By using a standard CMOS technology with only two metal layers and a heavily doped substrate, the spiral inductor will have a large series resistance compared with three–four metal layer technologies, and the substrate losses become a very important factor due to the relatively low resistivity of silicon. A major source of substrate losses is the capacitive coupling when current is flowing not only through the metal strip but also through the silicon substrate.

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