By Inder Bahl
A finished and updated therapy of RF and Microwave Transistor Amplifiers
This booklet presents cutting-edge insurance of RF and microwave transistor amplifiers, together with low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. subject matters lined comprise modeling, research, layout, packaging, and thermal and fabrication issues.
via a distinct integration of concept and perform, readers will learn how to remedy amplifier-related layout difficulties starting from matching networks to biasing and balance. greater than 240 difficulties are integrated to assist readers try their uncomplicated amplifier and circuit layout skills-and greater than 1/2 the issues function totally worked-out options.
With an emphasis on thought, layout, and daily purposes, this publication is aimed toward scholars, academics, scientists, and practising engineers who're attracted to broadening their wisdom of RF and microwave transistor amplifier circuit design.
Contents in Brief
1. advent 1
2. Linear community research 17
3. Amplifier features and Definitions 33
4. Transistors 61
5. Transistor types 91
6. Matching community elements 125
7. Impedance Matching concepts 149
8. Amplifier sessions and Analyses 185
9. Amplifier layout equipment 211
10. High-Efficiency Amplifier thoughts 259
11. Broadband Amplifier strategies 295
12. Linearization options 331
13. High-Voltage strength Amplifier layout 363
14. Hybrid Amplifiers 399
15. Monolithic Amplifiers 419
16. Thermal layout 453
17. balance research 479
18. Biasing Networks 507
19. energy Combining 527
20. built-in functionality Amplifiers 557
21. Amplifier programs 585
22. Transistor and Amplifier Measurements 613
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Extra info for Fundamentals of RF and Microwave Transistor Amplifiers
Calculate its value for a quarter-wave long line when Z0 and Z values are 50 and 25 , respectively. Prove that a lossless and reciprocal three-port network cannot be designed with all ports matched. Show that for a lossless and reciprocal two-port network, |S21 |2 = 1 − |S11 |2 . 7 Linear Network Analysis Zin = Z0 ZL + j Z0 tan β Z0 + j ZL tan β The line is lossless and its characteristic impedance, phase constant, and physical length are Z0 , β, and , respectively. Chapter 3 Amplifier Characteristics and Definitions Although many characteristics must be considered when designing an amplifier, the most important of these are frequency range or bandwidth, power gain, noise figure, power output, 1-dB gain compression point, input and output VSWR, power added efficiency (PAE), intermodulation distortion, adjacent channel power ratio (ACPR), dynamic range, phase noise, stability [1–7], and reliability [8–13].
Bahl Copyright © 2009 John Wiley & Sons, Inc. 1 One-port equivalent circuit of a transistor: (a) input and (b) output. 2 Two-port network for a Γout ΓL Γin transistor. where f0 is the center frequency. 16 pF. The calculated values of fin and fout at 10 GHz are fin ∼ = 25% and fout = 50% This shows that the bandwidth of the transistor is limited by its input impedance, which can be increased by adding more resistance in series with the device. However, it reduces the transistor gain but improves its stability as discussed in Chapter 17.
A. E. Harrison, Klystron Tubes, McGraw-Hill, New York, 1947. S. Y. Liao, Microwave Devices and Circuits, Prentice Hall, Englewood Cliffs, NJ, 1980. O. P. Gandhi, Microwave Engineering and Applications, Pergamon, New York, 1981. J. R. Pierce, Traveling Wave Tubes, Van Nostrand, Princeton, NJ, 1950. L. A. Blackwell and K. L. Kotzebue, Semiconductor-Diode Parametric Amplifiers, Prentice Hall, Englewood Cliffs, NJ, 1964. 6. P. Penfield and R. Rafuse, Varactor Applications, MIT Press, Cambridge, MA, 1962.