By Vadim Issakov
There are non-stop efforts focussed on enhancing street site visitors safeguard all over the world. various automobile security features comparable to motive force information platforms were invented. Many motive force guidance positive factors depend upon radar-based sensors, yet are steeply-priced. consciousness of inexpensive radar front-end circuits may permit their implementation in less costly financial system autos, significantly contributing to site visitors safeguard. price relief calls for high-level integration of the microwave front-end circuitry, in particular analog and electronic circuit blocks co-located on a unmarried chip. The e-book provides the layout, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar applied sciences. The applicability of a customary electronic 0.13 μm CMOS know-how for attention of a 24 GHz narrow-band radar front-end sensor is investigated. The awarded circuits are appropriate for car, business and patron purposes, as e.g. lane-change assistant, door openers or alarms.
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Additional info for Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies
This base emitter base collector (BEBC) configuration is shown on the right in Fig. 6. Buried Layer Buried Layer collector contact emitter contact base contact p+-polysilicon p+-polysilicon Fig. 6 Transistor layout in BEC and BEBC configurations . However, wider overlap between base and collector contacts causes higher basecollector capacitance Cbc , thus posing a trade-off between Rb and Cbc . The larger horizontal dimension of the transistor results in a wider buried layer and thus higher collector-substrate capacitance Ccs .
5D field solver SonnetEM. The obtained S-parameter models of the metallization are then included in simulations in Agilent’s Advanced Design System (ADS). However, using S-parameter models in time-domain simulations often leads to convergence and causality issues. Therefore, in some cases lumped element equivalent circuits are used instead of the frequency based data to model passive on-chip components. This requires techniques to fit accurately frequency dependent S-parameters to an equivalent circuit in a given frequency range.
Furthermore, the complexity of the manual surface mesh generation and numerical efforts increase significantly with inclusion of any further bodies or problem details into the model. References 1. M. Kang, J. Gil, and H. Shin, ‘‘A Simple Parameter Extraction Method of Spiral On-Chip Inductors’’, IEEE Transactions on Electron Devices, vol. 52, pp. 1976--1981, September 2005. 2. Y. Cao, R. A. Groves, X. Huang, N. D. -O. Plouchart, R. A. -J. King, and C. Hu, ‘‘Frequency-Independent Equivalent-Circuit Model for On-Chip Spiral Inductors’’, IEEE Journal of Solid-State Circuits, vol.