Download Nonlinear Transistor Model Parameter Extraction Techniques by Dr Matthias Rudolph, Christian Fager, David E. Root PDF

By Dr Matthias Rudolph, Christian Fager, David E. Root

In achieving actual and trustworthy parameter extraction utilizing this whole survey of state of the art thoughts and strategies. A staff of specialists from and academia provide you with insights right into a diversity of key subject matters, together with parasitics, intrinsic extraction, facts, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package deal results. learn the way comparable techniques to parameter extraction may be utilized to assorted applied sciences. various real-world business examples and size effects express you the way the theories and techniques provided can be utilized in perform. even if you utilize transistor types for assessment of machine processing and also you have to comprehend the equipment in the back of the types you employ, otherwise you are looking to improve types for current and new equipment forms, this is often your entire consultant to parameter extraction.

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1 Introduction A brief overview and selected topics on DC and thermal compact modeling of III– V compound semiconductor transistors are discussed. Specifically, characteristics of field-effect transistors (GaAs MESFET and pseudomorphic HEMT (pHEMT)) and heterojunction bipolar transistors (GaAs and InP HBTs) are presented. Basic DC characteristics of III–V FETs and HBTs are reviewed, and parameter extraction techniques and methods pertinent to compact modeling are shown. Properly extracted parameters, in turn, can be used for process control and optimization by monitoring device characteristics within and across many wafers.

Chandler, M. Culver, D. D’Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, T. Shirley, S. Thomas, and W. , 2000, pp. 131–135. 3 Extrinsic parameter and parasitic elements in III–V HBT and HEMT modeling Sonja R. Nedeljkovic, William J. F. McMacken, and Joseph M. 1 Introduction A model formulation that is founded on device physics and optimized for good convergence in different simulator platforms is a first step in providing good, advanced models that will satisfy designers’ needs. The degree of extraction complexity will depend directly on the choice of model, but every modeling procedure, regardless of model complexity, relies on accurate device measurements, reliable de-embedding techniques, and methods for parameter extraction.

Similar to the gate diode current parameters of the FET, the saturation current is the vertical axis intercept and the ideality factor is related to the slope on a log-linear I–V plot. Three current components are typically considered. 1). The base–emitter diode current (which is a function of the base–emitter voltage) is the sum of the high current (“ideal”) and low current (“nonideal”, or “n = 2”) terms. Ibe = Ibe high + Ibe low = ISH exp Vbe (NH × Vt ) − 1 + ISE exp Vbe (NE × Vt ) − 1 . 8 Data for 1 × 3 µm2 InP HBT exhibiting significant high current compression effects at low voltage (“soft-knee” effect).

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