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E. Jennings, J. Mol. , 1980, 83, 213. R. W. Hannah and J. P. Coates, Eur. Spectrosc. N e w , 1980, 32, 30. W. F. Edgell, E. W. Balk, Appl. , 1980, 34, 420. J. Altmann, R. Baumgart, and C. Weitkamp, Appl. , 1981. 20, 995. C. -P. Bouanich, P. Figuiere, and H. Szwarc, J. Chem. 74, 77. F. D. , 1980, 20. 297. W. S. Dalton and H. Sakai, Appl. , 1980, 19, 2145. P. T. Walsh, S. J. Gentry, A. Jones, and T. A. Jones, J . Phys. , 1981. 14, 309. P. C. M. vanwoerkom, P. Blok, H. J. vanveenendaal, and R. L. de Groot, Appl.

V. '51 No change in quantum yield was observed up to a power density of lo8 W cm-'. Several photodiode systems have been discussed for the measurement of subnanosecond laser pulses. ' 5 2 A risetime of 200 ps was reported. An edge-incident Si photodiode was shown to have a similar temporal response, 53 and in addition, as a phototransistor it responded to CW radiation with current gain. '" The response was 70ps (FWHM) with a 45 ps rise and decay time. ' 5 6 The time response, linearity, and other properties of germanium, silicon, and vacuum photodiodes were investigated using ps pulses from a Ramantuned mode-locked Nd-YAG laser.

W. Hannah and J. P. Coates, Eur. Spectrosc. N e w , 1980, 32, 30. W. F. Edgell, E. W. Balk, Appl. , 1980, 34, 420. J. Altmann, R. Baumgart, and C. Weitkamp, Appl. , 1981. 20, 995. C. -P. Bouanich, P. Figuiere, and H. Szwarc, J. Chem. 74, 77. F. D. , 1980, 20. 297. W. S. Dalton and H. Sakai, Appl. , 1980, 19, 2145. P. T. Walsh, S. J. Gentry, A. Jones, and T. A. Jones, J . Phys. , 1981. 14, 309. P. C. M. vanwoerkom, P. Blok, H. J. vanveenendaal, and R. L. de Groot, Appl. , 1980,19,2547. M. R. Whitbeck, Appl.

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